Cleaning Solution for Crystalline Silicon
Frontier Cleaner series
Capable of removing particles and metal impurities simultaneously.
Little reattachment of metal impurities from cleaner.
Reduction of cleaning process.
Dilution availability leads to excellent cost performance.
Product Name | Type | Cleaning Object |
---|---|---|
Frontier Cleaner-A series | Acid | Metal impurities, Particles |
Frontier Cleaner-B series | Alkaline |
- Cleaning Solution : Frontier Cleaner A-02, (diluted by 30 multi. times), SC-1
- Cleaning condition : Dipping, Room Temperature, 3 min
- Cleaning performance for particles
TMK-1
Organic alkalis based cleaning solution for semiconductor manufacturing process.
Not containing alkali metal.
Product Name | Type | Cleaning Object |
---|---|---|
TMK-1 | Alkaline | Particles |
CMP-M series/CMP-B seriesPost-CMP Cleaning Solution
No chemical damage to metal and dielectric materials.
Removal of various contamination from wafer surface (slurry abrasives, organic residues) during pCMP cleaning.
Product name | Type | Dielectric materials | Interconection | Cleaning objects |
---|---|---|---|---|
CMP-M02 | Acid | SiO2, TEOS | W, Cu | Metal impurities, particles |
CMP-M09 | Acid | SiO2, TEOS | W, Cu | Metal impurities, particles |
CMP-B01 | Alkaline | SiO2, TEOS, low-k | W, Cu | Particles, Organic residues |
CMP-B200 series | Alkaline | SiO2, TEOS, low-k, p-low-k | Cu | Metal impurities, Particles, Organic residues |
Cleaning performance for particles
- Wafer: Cu/Si wafers
- Process method : Cu CMP –> barrier metal CMP –> cleaning –> drying {F-REX300S II (EBARA)}
- Cleaning solution : CMP-B201,B202 (diluted by 100 multi times)
Cleaning performance for metal impurities
- Wafer: Na-Ox/Si wafers
- Cleaning condition : Dipping, 25°C, 3min
- Cleaning solution : CMP-B201, B202 (diluted by 100 multi times)