High Purity Acid/Alkalis
| ACID/ALKALI | COMMON APPLICATION | CAS NO | MOLECULAR FORMULA |
|---|---|---|---|
| Acetic Acid | Wet etching, surface cleaning, copper removal | 64-19-7 | C₂H₄O₂ |
| Hydrochloric Acid | Oxide stripping, metal cleaning (Al, Ti, etc.) | 7647-01-0 | HCl |
| Hydrofluoric Acid | Silicon oxide (SiO₂) etching, surface cleaning | 7664-39-3 | HF |
| Nitric Acid | Metal surface cleaning, oxidizer in mixtures (SC1/SC2) | 7697-37-2 | HNO₃ |
| Phosphoric Acid | Etching of silicon nitride (Si₃N₄), oxide cleaning | 7664-38-2 | H₃PO₄ |
| Sulfuric Acid | Resist stripping (with peroxide, SPM mixture), heavy organic removal | 7664-93-9 | H₂SO₄ |
| Ammonia Water (Aqueous Ammonia) | SC1 cleaning (particle removal), surface conditioning | 1336-21-6 | NH₄OH |
| Hydrogen Peroxide | Oxidizing agent in RCA clean (SC1/SC2), organic removal | 7722-84-1 | H₂O₂ |
| Ammonium Fluoride | Oxide etching (buffered HF = BOE), surface smoothing | 12125-01-8 | NH₄F |
| Citric Acid | Metal cleaning (especially copper), mild etching | 77-92-9 | C₆H₈O₇ |
| Tartaric Acid | Copper surface preparation, polishing additive | 87-69-4 | C₄H₆O₆ |
| Sodium Hydroxide | Aluminum etching, pH adjustment in cleaning solutions | 1310-73-2 | NaOH |
| Potassium Hydroxide | Silicon anisotropic wet etching (e.g., MEMS), cleaning | 1310-58-3 | KOH |
| TMAH-22 (Tetramethylammonium Hydroxide 22%) | Photoresist developer (especially for i-line, DUV resists), silicon wet etching | 75-59-2 (for TMAH) | C₄H₁₃N·OH |
| TMAH-25 (Tetramethylammonium Hydroxide 25%) | Same as TMAH-22, slightly higher concentration for specific resist processes | 75-59-2 (for TMAH) | C₄H₁₃N·OH |
High Purity Solvent
| SOLVENT | COMMON APPLICATION | CAS NO | MOLECULAR FORMULA |
|---|---|---|---|
| 2-Butanone (MEK) | Photoresist stripping, surface degreasing | 78-93-3 | C₄H₈O |
| 2-Propanol (IPA) | Final rinse, particle removal, drying | 67-63-0 | C₃H₈O |
| 4-Methyl-2-pentanone (MIBK) | E-beam resist development, resist stripping | 108-10-1 | C₆H₁₂O |
| Acetone | Pre-cleaning wafers, photoresist removal | 67-64-1 | C₃H₆O |
| Butyl Diglycol (BDG) | Resist solvent, cleaning | 112-34-5 | C₈H₁₈O₃ |
| Cyclohexanone | Resist solvent for thick coatings, formulations | 108-94-1 | C₆H₁₀O |
| Denatured Ethanol | Equipment cleaning, surface wiping | Varies | C₂H₆O |
| Dimethyl Sulfoxide (DMSO) | Resist stripping, cleaning solvent | 67-68-5 | C₂H₆OS |
| Ethanol (99.5%) | Surface cleaning, degreasing | 64-17-5 | C₂H₆O |
| Ethyl Acetate | Photoresist thinning, organic cleaning | 141-78-6 | C₄H₈O₂ |
| Isopentyl Acetate | Specialty cleaning, organic residue removal | 123-92-2 | C₇H₁₄O₂ |
| Methanol | Surface cleaning, degreasing | 67-56-1 | CH₄O |
| Monoethanolamine (MEA) | Cleaning, surface preparation, photoresist developer | 141-43-5 | C₂H₇NO |
| n-Butyl Acetate | Resist thinning, edge bead removal (EBR) | 123-86-4 | C₆H₁₂O₂ |
| N-Methyl-2-pyrrolidinone (NMP) | Resist stripping (implanted resist), cleaning | 872-50-4 | C₅H₉NO |
| Propylene Glycol Methyl Ether (PGME) | Resist solvent, edge bead removal, cleaning | 107-98-2 | C₄H₁₀O₂ |
| Propylene Glycol Monomethyl Ether Acetate (PGMEA) | Resist solvent, edge bead removal | 108-65-6 | C₆H₁₂O₃ |
| Toluene | Organic polymer removal, resist stripping | 108-88-3 | C₇H₈ |
| Xylene | Thick resist removal, lift-off processes | 1330-20-7 | C₈H₁₀ |
| γ-Butyrolactone (GBL) | Resist formulation, cleaning | 96-48-0 | C₄H₆O₂ |
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