Post Ashing Residue Remover for Cu/low-k Process
- DeerClean-LK series is polymer remover highly recommendable for the single wafer cleaning method.
- Capable of removing post ashing residue within short time under low temperature after ashing without chemical attack on Cu and low-k film.
Residual removal performance
- Cleaning Solution : DeerClean-LK3
- Cleaning Condition : Dipping, 25°C, 3 min
- Wafer : Via hole patterned wafer
Post Ashing Residue Removers for Al Process
- Excellent removal performance of organic subtances and metal residues.
- Capable of inhibiting damage to metals such as Al-Cu,Cu,W,Ti,TiN,Ni etc.
- Capable of removing post ion-implanted resist and dry film resist.
Residue removal performance
- Cleaning Solution : JELK-101
- Cleaning condition : Dipping, 60°C, 10~30 min
- Wafer : Al line (TiN/Al-Cu/TiN/TEOS/Si)
- Capable of removing post ashing residue.
- No chemical damage to Al line and dielectric materials.
- SWPR-200 series : Capable of removing positive resist.
- Capable of removing post dry etching and ashing residue under low temperature in a short time.
- Less chemical damage to various metals including Al and dielectric materials.
DeerClean-SA1 – Residue removal performance
DeerClean-SA3 Residue removal performance